Full Member
Sadia Muniza Faraz
Membership since:
2025
Field of activity:
Other Memberships/Affiliations
Institution of Engineers Pakistan(IEP)
Degrees:
2013
Doctorate Engineering sciences
Physical simulation, fabrication and characterization of electronic and photonic devices in wide band gap semiconductors
2011
Master Engineering sciences
Licentiate of Engineering (Semiconductor Physics)
2006
Master Engineering sciences
Master of Electronic Engineering (Specialization: Microsystem Design)
1996
Undergraduate Engineering sciences
Bachelor of Electrical Engineering
Publications resulting from Research
Journal Papers:
[1] M. Asghar, F. Iqbal, S. M. Faraz, V. Jokubavicius, Q. Wahab, M. Syvajarvi “Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method” , Physica B: Condensed Matter, vol. 407, no.15, pp. 3038, 2012.
[2] M. Asghar, F. Iqbal, S. M. Faraz, V. Jokubavicius, Q. Wahab, M. Syväjärvi, “Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy” Physica B: Condensed Matter, Vol. 407, no.15, pp. 3041, 2012.
[3] S. M. Faraz, H. Ashraf, M. Imran Arshad, P. R. Hageman, M. Asghar and Q. Wahab, “Interface state density of free-standing GaN Schottky diodes”, Semicond. Sci. Technol. vol. 25, no.9, pp. 095008, Sept. 2010.
[4] Hadia Noor, P. Klason, S. M. Faraz, O. Nur, Q. Wahab, M. Willander, and M. Asghar, “Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices”, J. Appl. Phys., vol.107, no. 10, pp.103717, May 2010.
[5] H. Ashraf, M. Imran Arshad, S. M. Faraz, Q. Wahab, P. R. Hageman and M. Asghar, “Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy”, J. Appl. Phys., vol.108, no. 10, pp.103708, Nov. 2010.
[6] S. M. Faraz, N. H. Alvi, A. Henry, O. Nur, M. Willander and Q.Wahab, “Annealing effects on electrical and optical properties of n-ZnO/p-Si heterojunction diodes”, Advanced Materials Research, vol. 324, pp 233, Aug. 2011.
[7] S. M. Faraz, Hadia noor, M. Asghar, M. Willander, Q. Wahab, “Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements”, Advanced Materials Research, vol. 79-82, pp. 1317, Aug.2009.
Conference papers
[8] H. Shumail, S. M. Faraz, “ Physical Modelling and Simulation of Au/ZnO Schottky diode“, 2018 IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, August 14-17, 2018.
DOI: 10.1109/SMELEC.2018.8481294
[9] S.Masood, M. Mazhar, S. M. Faraz, Synthesis of Graphene Ink For Electrodes Of Organic Solar Cell“ , International Conference on Emerging Trends In Telecommunication and Electronic Engineering IC(TE)2, NED University, Karachi, Pakistan, February 27-28, 2018.
[10] M. Mazhar, H. Sayyad and S. M. Faraz, “Anthocyanin based Photosensitizer for Natural Dye-Sensitized Solar Cells“, 2017 2nd International Electrical Engineering Conference (IEEC 2017), organized by The Institutution of Engineers, Pakistan, May. 12-13, 2017.
[11] M. Mazhar, H. Mazia Ada, H. A. Siddiqui, and S. M. Faraz, “Fabrication of Dye Sensitized Solar Cells Using Natural Dyes”, 19th IEEE International Multi-Topic Conference (INMIC 2016) Air University Islamabad, Pakistan , December 5-6, 2016.
[12] M. Mazhar, H. Mazia Ada, U. Hani, H. A. Siddiqui, and S. M. Faraz, “Synthesis of Dye Sensitized Solar Cells Using Natural Resources”, 1st International Electrical Engineering Congress, organized by The Institutution of Engineers, Pakistan, May 13- 14, 2016.
[13] S. M. Faraz, O. Nur, M. Willander and Q. Wahab, “I nterface states density of Au/n-ZnO nanorods Schottky diodes”, IOP Conf. Ser.: Mater. Sci. Eng., vol. 34, pp. 012006, 2012. doi:10.1088/1757-899X/34/1/012006.
[14] S. M. Faraz, N. H. Alvi, A. Henry , O. Nur, M. Willander, Q. Wahab, “Post fabrication annealing effects on electrical and optical characteristics of n-ZnO nanorods/p-Si heterojunction diodes”, Techconnect World 2011, Nanotech Conference, June 13-16, 2011, Boston, Massachusetts, USA. NSTI-Nanotech 2011, Vol.2, pp. 68, 2011. ISBN: 978-1-4398-7139-3.
[15] S. M. Faraz, M. Willander and Q. Wahab, “Current Transport Studies and Extraction of Series Resistance of Pd/ZnO Schottky Diode”, 14th IEEE International Multitopic Conference (INMIC 2011), Karachi, Pakistan, December 22-24, 2011. ISBN: 978-1-4577-0654-7, doi 10.1109/INMIC.2011.6151472.
[16] S. M. Faraz, V. Khranovskyy, R. Yakimova, A. Ulyashin and Q. Wahab, “Temperature dependent current transport in Schottky diodes of nano structured ZnO grown on Si by magnetron sputtering”, Proceedings 2011 IEEE Regional Symposium of Micro & Nano Electronics, Kota Kinabalu, Malaysia, Sept. 28-30, 2011. pp. 48, ISBN: 978-1-61284-846-4.
[1] M. Asghar, F. Iqbal, S. M. Faraz, V. Jokubavicius, Q. Wahab, M. Syvajarvi “Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method” , Physica B: Condensed Matter, vol. 407, no.15, pp. 3038, 2012.
[2] M. Asghar, F. Iqbal, S. M. Faraz, V. Jokubavicius, Q. Wahab, M. Syväjärvi, “Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy” Physica B: Condensed Matter, Vol. 407, no.15, pp. 3041, 2012.
[3] S. M. Faraz, H. Ashraf, M. Imran Arshad, P. R. Hageman, M. Asghar and Q. Wahab, “Interface state density of free-standing GaN Schottky diodes”, Semicond. Sci. Technol. vol. 25, no.9, pp. 095008, Sept. 2010.
[4] Hadia Noor, P. Klason, S. M. Faraz, O. Nur, Q. Wahab, M. Willander, and M. Asghar, “Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices”, J. Appl. Phys., vol.107, no. 10, pp.103717, May 2010.
[5] H. Ashraf, M. Imran Arshad, S. M. Faraz, Q. Wahab, P. R. Hageman and M. Asghar, “Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy”, J. Appl. Phys., vol.108, no. 10, pp.103708, Nov. 2010.
[6] S. M. Faraz, N. H. Alvi, A. Henry, O. Nur, M. Willander and Q.Wahab, “Annealing effects on electrical and optical properties of n-ZnO/p-Si heterojunction diodes”, Advanced Materials Research, vol. 324, pp 233, Aug. 2011.
[7] S. M. Faraz, Hadia noor, M. Asghar, M. Willander, Q. Wahab, “Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements”, Advanced Materials Research, vol. 79-82, pp. 1317, Aug.2009.
Conference papers
[8] H. Shumail, S. M. Faraz, “ Physical Modelling and Simulation of Au/ZnO Schottky diode“, 2018 IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, August 14-17, 2018.
DOI: 10.1109/SMELEC.2018.8481294
[9] S.Masood, M. Mazhar, S. M. Faraz, Synthesis of Graphene Ink For Electrodes Of Organic Solar Cell“ , International Conference on Emerging Trends In Telecommunication and Electronic Engineering IC(TE)2, NED University, Karachi, Pakistan, February 27-28, 2018.
[10] M. Mazhar, H. Sayyad and S. M. Faraz, “Anthocyanin based Photosensitizer for Natural Dye-Sensitized Solar Cells“, 2017 2nd International Electrical Engineering Conference (IEEC 2017), organized by The Institutution of Engineers, Pakistan, May. 12-13, 2017.
[11] M. Mazhar, H. Mazia Ada, H. A. Siddiqui, and S. M. Faraz, “Fabrication of Dye Sensitized Solar Cells Using Natural Dyes”, 19th IEEE International Multi-Topic Conference (INMIC 2016) Air University Islamabad, Pakistan , December 5-6, 2016.
[12] M. Mazhar, H. Mazia Ada, U. Hani, H. A. Siddiqui, and S. M. Faraz, “Synthesis of Dye Sensitized Solar Cells Using Natural Resources”, 1st International Electrical Engineering Congress, organized by The Institutution of Engineers, Pakistan, May 13- 14, 2016.
[13] S. M. Faraz, O. Nur, M. Willander and Q. Wahab, “I nterface states density of Au/n-ZnO nanorods Schottky diodes”, IOP Conf. Ser.: Mater. Sci. Eng., vol. 34, pp. 012006, 2012. doi:10.1088/1757-899X/34/1/012006.
[14] S. M. Faraz, N. H. Alvi, A. Henry , O. Nur, M. Willander, Q. Wahab, “Post fabrication annealing effects on electrical and optical characteristics of n-ZnO nanorods/p-Si heterojunction diodes”, Techconnect World 2011, Nanotech Conference, June 13-16, 2011, Boston, Massachusetts, USA. NSTI-Nanotech 2011, Vol.2, pp. 68, 2011. ISBN: 978-1-4398-7139-3.
[15] S. M. Faraz, M. Willander and Q. Wahab, “Current Transport Studies and Extraction of Series Resistance of Pd/ZnO Schottky Diode”, 14th IEEE International Multitopic Conference (INMIC 2011), Karachi, Pakistan, December 22-24, 2011. ISBN: 978-1-4577-0654-7, doi 10.1109/INMIC.2011.6151472.
[16] S. M. Faraz, V. Khranovskyy, R. Yakimova, A. Ulyashin and Q. Wahab, “Temperature dependent current transport in Schottky diodes of nano structured ZnO grown on Si by magnetron sputtering”, Proceedings 2011 IEEE Regional Symposium of Micro & Nano Electronics, Kota Kinabalu, Malaysia, Sept. 28-30, 2011. pp. 48, ISBN: 978-1-61284-846-4.