Full Member
ZHAN GAO GAO
Membership since:
2025
Field of activity:
Degrees:
2017
Doctorate Engineering sciences
Widebandgap Semiconductor Micro-electronic Devices
2011
Master Physics
ZnO nanocolumn growth using MBE and wet chemical method
2004
Undergraduate Physics
Optical information science and technology
Undergraduate Other
English literature
Publications resulting from Research
Z. Gao, M. F. Romero, F. Calle. 2017, “Thermal and electrical stability of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors”. under review.
Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillon, E. San Andrés, F. Calle. 2017, “Effects of Gd¬2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs”. IEEE Electron Device Letters, 38, pp. 611-614.
Z. Gao, M. F. Romero, A. M. Pampillon, E. San Andres, F. Calle. 2016, “Thermal assessment of AlGaN/GaN MOS-HEMTs on Si substrate using Gd2O3 as gate dielectric”. IEEE Transactions on Electron Devices, 63, pp. 2729-2734 .
Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillon, E. San Andrés, F. Calle. 2017, “Effects of Gd¬2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs”. IEEE Electron Device Letters, 38, pp. 611-614.
Z. Gao, M. F. Romero, A. M. Pampillon, E. San Andres, F. Calle. 2016, “Thermal assessment of AlGaN/GaN MOS-HEMTs on Si substrate using Gd2O3 as gate dielectric”. IEEE Transactions on Electron Devices, 63, pp. 2729-2734 .